Infineon · FETs & Power MOSFETs · MPN IPDQ60R010S7AXTMA1
No reviews yet — be the first to review Infineon IPDQ60R010S7AXTMA1.
| Gate Charge(Qg) | 318nC@12V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 187pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 694W |
| RDS(on) | 10mΩ@12V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.987nF |
N-Channel 600V 50A 694W Surface Mount HDSOP-22