Infineon · FETs & Power MOSFETs · MPN IPDQ60R007CM8XTMA1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 370nC@10V |
| Output Capacitance(Coss) | 192pF |
| Current - Continuous Drain(Id) | 288A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.7V |
| Pd - Power Dissipation | 1.249kW |
| RDS(on) | 7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16.385nF |
| Type | N-Channel |
600V 288A 4.7V 1.249kW 7mΩ@10V 1 N-channel N-Channel HDSOP-22 Single FETs, MOSFETs RoHS