Infineon · FETs & Power MOSFETs · MPN IPDD60R190G7
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 18nC@10V |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 76W |
| Reverse Transfer Capacitance (Crss@Vds) | 277pF |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 718pF |
N-Channel 650V 76W Surface Mount HDSOP-10-6.5mm