Infineon · FETs & Power MOSFETs · MPN IPDD60R170CFD7XTMA1
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 137W |
| RDS(on) | 170mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.016nF |
600V 12A 4V 137W 170mΩ@10V 1 N-channel HDSOP-10 Single FETs, MOSFETs RoHS