Infineon · FETs & Power MOSFETs · MPN IPDD60R125G7
No reviews yet — be the first to review Infineon IPDD60R125G7.
| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 420pF |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.08nF |
650V 27A 3.5V 120W 125mΩ@10V 1 N-channel HDSOP-10-6.6mm Single FETs, MOSFETs RoHS