Infineon · FETs & Power MOSFETs · MPN IPDD60R125CFD7XTMA1
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 24pF |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 176W |
| Reverse Transfer Capacitance (Crss@Vds) | 451pF |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.329nF |
600V 27A 4.5V 176W 125mΩ@10V 1 N-channel HDSOP-10 Single FETs, MOSFETs RoHS