Infineon · FETs & Power MOSFETs · MPN IPDD60R105CFD7XTMA1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Output Capacitance(Coss) | 28pF |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 198W |
| Reverse Transfer Capacitance (Crss@Vds) | 519pF |
| RDS(on) | 105mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.504nF |
600V 31A 4.5V 198W 105mΩ@10V 1 N-channel HDSOP-10 Single FETs, MOSFETs RoHS