Infineon · FETs & Power MOSFETs · MPN IPDD60R102G7
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 139W |
| Reverse Transfer Capacitance (Crss@Vds) | 516pF |
| RDS(on) | 102mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.32nF |
32A 3.5V 139W 102mΩ@10V 1 N-channel HDSOP-10-6.6mm Single FETs, MOSFETs RoHS