Infineon · FETs & Power MOSFETs · MPN IPDD60R055CFD7XTMA1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 67nC@10V |
| Current - Continuous Drain(Id) | 52A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 329W |
| Reverse Transfer Capacitance (Crss@Vds) | 986pF |
| RDS(on) | 55mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.724nF |
600V 52A 4.5V 329W 55mΩ@10V 1 N-channel HDSOP-10 Single FETs, MOSFETs RoHS