Infineon · FETs & Power MOSFETs · MPN IPDD60R050G7
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| Gate Charge(Qg) | 68nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 57A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 278W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.05nF |
| RDS(on) | 50mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.67nF |
650V 57A 3.5V 278W 50mΩ@10V 1 N-channel HDSOP-10-6.5mm Single FETs, MOSFETs RoHS