Infineon IPD95R750P7

Infineon · FETs & Power MOSFETs · MPN IPD95R750P7

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage950V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation73W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)712pF

Technical details

N-Channel 950V 9A 73W Surface Mount TO-252-3

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