Infineon · FETs & Power MOSFETs · MPN IPD95R2K0P7ATMA1
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| Gate Charge(Qg) | 10nC@10V |
|---|---|
| Drain to Source Voltage | 950V |
| Output Capacitance(Coss) | 5pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 37W |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF |
| RDS(on) | 2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 330pF |
| Type | N-Channel |
N-Channel 950V 4A 37W Surface Mount TO-252