Infineon · FETs & Power MOSFETs · MPN IPD95R1K2P7
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 950V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 478pF |
N-Channel 950V 6A 52W Surface Mount TO-252-3