Infineon · FETs & Power MOSFETs · MPN IPD90R1K2C3
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Output Capacitance(Coss) | 35pF |
| Current - Continuous Drain(Id) | 5.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 83W |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 710pF |
N-Channel 900V 5.1A 83W Surface Mount TO-252