Infineon · FETs & Power MOSFETs · MPN IPD90N10S4L06ATMA1
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF |
| RDS(on) | 6.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.25nF |
100V 90A 2.1V 136W 6.6mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS