Infineon IPD90N06S4L03ATMA2

Infineon · FETs & Power MOSFETs · MPN IPD90N06S4L03ATMA2

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)170nC@10V
Output Capacitance(Coss)2.68nF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13nF
TypeN-Channel

Technical details

60V 90A 2.2V 150W 3.5mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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