Infineon · FETs & Power MOSFETs · MPN IPD90N04S4-05
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| Gate Charge(Qg) | 29nC |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 560pF |
| Current - Continuous Drain(Id) | 86A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 5.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.28nF |
| Type | N-Channel |
40V 86A 3V 65W 5.2mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS