Infineon IPD90N04S4-03

Infineon · FETs & Power MOSFETs · MPN IPD90N04S4-03

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Specifications

Gate Charge(Qg)51nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)950pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation94W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)3.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.05nF
TypeN-Channel

Technical details

N-Channel 40V Surface Mount TO-252-3

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