Infineon IPD90N04S4-02

Infineon · FETs & Power MOSFETs · MPN IPD90N04S4-02

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Specifications

Gate Charge(Qg)118nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)127pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.43nF

Technical details

N-Channel 40V 90A 150W Surface Mount TO-252-3

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