Infineon · FETs & Power MOSFETs · MPN IPD90N04S3-H4
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 4.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.9nF |
40V 90A 4V 115W 4.3mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS