Infineon · FETs & Power MOSFETs · MPN IPD900P06NM
No reviews yet — be the first to review Infineon IPD900P06NM.
| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 12.7A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 63W |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| RDS(on) | 90mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.1nF |
P-Channel 60V 12.7A 63W Surface Mount TO-252-3