Infineon · FETs & Power MOSFETs · MPN IPD85P04P4L06ATMA2
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| Gate Charge(Qg) | 104nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 88W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 6.4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.58nF |
P-Channel 40V 85A 88W Surface Mount TO-252-3-313