Infineon IPD85P04P407ATMA1

Infineon · FETs & Power MOSFETs · MPN IPD85P04P407ATMA1

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Specifications

Gate Charge(Qg)89nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)2.28nF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)91pF
RDS(on)7.3mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.085nF
TypeP-Channel

Technical details

P-Channel 40V 85A 88W Surface Mount TO-252-3-313

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