Infineon · FETs & Power MOSFETs · MPN IPD80R4K5P7ATMA1
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| Gate Charge(Qg) | 4nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 3pF |
| Current - Continuous Drain(Id) | 1.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 13W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 4.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 80pF |
N-Channel 800V 1.5A 13W Surface Mount TO-252