Infineon IPD80R450P7

Infineon · FETs & Power MOSFETs · MPN IPD80R450P7

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Specifications

Gate Charge(Qg)24nC
Drain to Source Voltage800V
Output Capacitance(Coss)14pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation73W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)450mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)770pF
Type-

Technical details

800V 11A 3.5V 73W 450mΩ@10V 1 N-channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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