Infineon IPD80R360P7

Infineon · FETs & Power MOSFETs · MPN IPD80R360P7

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation84W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)360mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)930pF

Technical details

800V 13A 3V 84W 360mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS

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