Infineon · FETs & Power MOSFETs · MPN IPD80R2K8CEATMA1
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Output Capacitance(Coss) | 13pF |
| Current - Continuous Drain(Id) | 1.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 2.8Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 290pF |
N-Channel 800V 1.9A 42W Surface Mount TO-252-3