Infineon IPD80R2K7C3A

Infineon · FETs & Power MOSFETs · MPN IPD80R2K7C3A

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)13pF
Current - Continuous Drain(Id)2A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)2.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)290pF

Technical details

N-Channel 800V 2A 42W Surface Mount TO-252-3

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