Infineon IPD80R2K4P7

Infineon · FETs & Power MOSFETs · MPN IPD80R2K4P7

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage800V
Current - Continuous Drain(Id)-
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

800V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS

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