Infineon IPD80R1K2P7

Infineon · FETs & Power MOSFETs · MPN IPD80R1K2P7

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage800V
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)300pF

Technical details

N-Channel 800V 4.5A 37W Surface Mount TO-252-2

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