Infineon · FETs & Power MOSFETs · MPN IPD80R1K0CEATMA1
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 31nC@10V |
| Output Capacitance(Coss) | 33pF |
| Current - Continuous Drain(Id) | 5.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 950mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 785pF |
N-Channel 800V 5.7A 30W Surface Mount TO-252-3