Infineon IPD80P03P4L07ATMA1

Infineon · FETs & Power MOSFETs · MPN IPD80P03P4L07ATMA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)80nC@10V
Output Capacitance(Coss)1.6nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)96pF
RDS(on)6.8mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.7nF
TypeP-Channel

Technical details

P-Channel 30V 80A 88W Surface Mount TO-252

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