Infineon IPD78CN10NG

Infineon · FETs & Power MOSFETs · MPN IPD78CN10NG

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)11nC@10V
Output Capacitance(Coss)101pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)78mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)716pF
TypeN-Channel

Technical details

100V 13A 4V 31W 78mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS

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