Infineon IPD75N04S406

Infineon · FETs & Power MOSFETs · MPN IPD75N04S406

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)640pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)5.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.55nF
TypeN-Channel

Technical details

N-Channel 40V 75A 58W Surface Mount TO-252-3-313

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