Infineon IPD75N04S4-06

Infineon · FETs & Power MOSFETs · MPN IPD75N04S4-06

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Specifications

Gate Charge(Qg)24.5nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)490pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)5.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.96nF
TypeN-Channel

Technical details

N-Channel 40V 58W Surface Mount TO-252

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