Infineon IPD70R600CE

Infineon · FETs & Power MOSFETs · MPN IPD70R600CE

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage700V
Current - Continuous Drain(Id)10.5A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation86W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)474pF

Technical details

700V 10.5A 3.5V 86W 600mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS

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