Infineon IPD70R1K4P7SAUMA1

Infineon · FETs & Power MOSFETs · MPN IPD70R1K4P7SAUMA1

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Specifications

Gate Charge(Qg)4.7nC@10V
Drain to Source Voltage700V
Current - Continuous Drain(Id)4A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation22.7W
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)158pF

Technical details

700V 4A 22.7W Surface Mount TO-252-3

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