Infineon IPD70N10S3L-12

Infineon · FETs & Power MOSFETs · MPN IPD70N10S3L-12

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Specifications

Gate Charge(Qg)77nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)135pF
RDS(on)11.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.55nF

Technical details

N-Channel 100V 70A 125W Surface Mount TO-252-3

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