Infineon · FETs & Power MOSFETs · MPN IPD65R950CFD
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| Gate Charge(Qg) | 14.1nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 36.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF |
| RDS(on) | 950mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 380pF |
650V 3.9A 4V 36.7W 950mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS