Infineon · FETs & Power MOSFETs · MPN IPD65R660CFD
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 594mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 615pF |
650V 6A 4.5V 62.5W 594mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS