Infineon · FETs & Power MOSFETs · MPN IPD65R600E6
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 63W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 440pF |
650V 7.3A 3.5V 63W 600mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS