Infineon · FETs & Power MOSFETs · MPN IPD65R420CFDA
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 8.7A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 83.3W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 378mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 870pF |
650V 8.7A 4V 83.3W 378mΩ@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS