Infineon IPD65R400CE

Infineon · FETs & Power MOSFETs · MPN IPD65R400CE

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Specifications

Gate Charge(Qg)39nC@10V
Drain to Source Voltage700V
Current - Continuous Drain(Id)15.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation118W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)400mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)710pF

Technical details

N-Channel 700V 15.1A 118W Surface Mount TO-252

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