Infineon · FETs & Power MOSFETs · MPN IPD65R1K4CFD
No reviews yet — be the first to review Infineon IPD65R1K4CFD.
| Gate Charge(Qg) | 10nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 2.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 28.4W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 262pF |
650V 2.8A 4V 28.4W 1.4Ω@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS