Infineon · FETs & Power MOSFETs · MPN IPD65R1K4C6
No reviews yet — be the first to review Infineon IPD65R1K4C6.
| Gate Charge(Qg) | 10.5nC@10V |
|---|---|
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 3.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 28W |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 225pF |
700V 3.2A 3.5V 28W 1.4Ω@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS