Infineon · FETs & Power MOSFETs · MPN IPD65R1K0CE
No reviews yet — be the first to review Infineon IPD65R1K0CE.
| Gate Charge(Qg) | 15.3nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 68W |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 328pF |
650V 7.2A 3.5V 68W 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS