Infineon · FETs & Power MOSFETs · MPN IPD650P06NM
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| Gate Charge(Qg) | 39nC@30V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF |
| RDS(on) | 65mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.6nF |
P-Channel 60V 22A 83W Surface Mount TO-252-3