Infineon · FETs & Power MOSFETs · MPN IPD640N06L G
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| Gate Charge(Qg) | 13nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 47W |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF |
| RDS(on) | 64mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 470pF |
60V 18A 47W Surface Mount TO-252