Infineon IPD60R950C6

Infineon · FETs & Power MOSFETs · MPN IPD60R950C6

No reviews yet — be the first to review Infineon IPD60R950C6.

Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)21pF
Current - Continuous Drain(Id)4.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)280pF

Technical details

600V 4.4A 37W Surface Mount TO-252

Related FETs & Power MOSFETs