Infineon IPD60R750E6

Infineon · FETs & Power MOSFETs · MPN IPD60R750E6

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Specifications

Drain to Source Voltage600V
Current - Continuous Drain(Id)5.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation48W
RDS(on)750mΩ@10V

Technical details

600V 5.7A 3.5V 48W 750mΩ@10V TO-252-3 Single FETs, MOSFETs RoHS

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